samsung evo 850 250 Gb

New flash disc Samsung

HTML result view exported from: https://openbenchmarking.org/result/1603091-GA-SAMSUNGEV23.

samsung evo 850 250 GbProcessorMotherboardChipsetMemoryDiskGraphicsAudioNetworkOSKernelDesktopDisplay DriverCompilerFile-SystemScreen ResolutionDmitryIntel Core i5-3470 @ 6.30GHz (4 Cores)ASUS P8Z77-V LE PLUSIntel Xeon E3-1200 v2/3rd8192MB250GB Samsung SSD 850 + 2000GB Seagate ST2000DM001-1CH1 + 1000GB Seagate ST31000528AS + 750GB Seagate ST3750330ASASUS NVIDIA GeForce GTX 660 2048MB (1019/3004MHz)Realtek ALC889Realtek RTL8111/8168/8411Arch Linux4.4.4-1-ARCH (x86_64)GNOME Shell 3.18.4NVIDIA 361.28GCC 5.3.0 + Clang 3.7.1btrfs3840x1200OpenBenchmarking.org- --disable-libssp --disable-libstdcxx-pch --disable-libunwind-exceptions --disable-multilib --disable-werror --enable-__cxa_atexit --enable-checking=release --enable-clocale=gnu --enable-gnu-indirect-function --enable-gnu-unique-object --enable-install-libiberty --enable-languages=c,c++,ada,fortran,go,lto,objc,obj-c++ --enable-libmpx --enable-lto --enable-plugin --enable-shared --enable-threads=posix --mandir=/usr/share/man --with-isl --with-linker-hash-style=gnu - CFQ / relatime,rw,space_cache,subvol=/home,subvolid=668 / RAID0- Scaling Governor: intel_pstate powersave

samsung evo 850 250 Gbaio-stress: Rand WriteStandard ErrorStandard DeviationDmitry106.1111.7627.16%OpenBenchmarking.org

AIO-Stress

Test: Random Write

OpenBenchmarking.orgMB/s, More Is BetterAIO-Stress 0.21Test: Random WriteDmitry20406080100SE +/- 11.76, N = 6106.111. (CC) gcc options: -pthread -laio


Phoronix Test Suite v10.8.4